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The Resource Advances in materials, processing, and devices in III-V compound semiconductors : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A., editors, Devendra K. Sadana, Lester E. Eastman, Russell Dupuis

Advances in materials, processing, and devices in III-V compound semiconductors : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A., editors, Devendra K. Sadana, Lester E. Eastman, Russell Dupuis

Label
Advances in materials, processing, and devices in III-V compound semiconductors : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A.
Title
Advances in materials, processing, and devices in III-V compound semiconductors
Title remainder
symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A.
Statement of responsibility
editors, Devendra K. Sadana, Lester E. Eastman, Russell Dupuis
Contributor
Subject
Genre
Language
eng
Member of
Additional physical form
Also issued online.
Cataloging source
DLC
Dewey number
621.381/52
Illustrations
illustrations
Index
index present
LC call number
QC611.8.C64
LC item number
A38 1989
Literary form
non fiction
Nature of contents
bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Sadana, Devendra K
  • Eastman, Lester F
  • Dupuis, Russell
Series statement
Materials Research Society symposium proceedings,
Series volume
v. 144
http://library.link/vocab/subjectName
Compound semiconductors
Label
Advances in materials, processing, and devices in III-V compound semiconductors : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A., editors, Devendra K. Sadana, Lester E. Eastman, Russell Dupuis
Instantiates
Publication
Bibliography note
Includes bibliographical references
Carrier category
volume
Carrier category code
nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
  • On the origin of the new electron traps induced by rapid thermal annealing in GaAs using capping proximity technique
  • Ion implantation and characterization of III-V materials
  • R.G. Wilson & D.B. Rensch
  • Ion beam processing of GaAs at elevated temperatures
  • J.S. Williams [and others]
  • Ion implantation damage and its annealing characteristics in an AlAs/GaAs layer structure
  • A.G. Cullis [and others]
  • Fabrication of GaAs/AlGaAs quantum well lasers with MeV oxygen ion implantation
  • F. Xiong [and others]
  • Activation uniformity dependence of undoped semi-insulating GaAs on post-implant annealing conditions
  • C. Lanzieri, R. Graffitti, & A. Cetronio
  • G. Marrakshi [and others]
  • Relationship between electrical activation and residual defects in MeV Si implanted GaAs
  • G. Braunstein [and others] --
  • The effects of capless face-to-face annealing temperature and time on the properties of silicon implanted gallium arsenide
  • O. Paz
  • Rapid thermal annealing and ion implantation of heteroepitaxial ZnSe/GaAs
  • B.J. Skromme [and others]
  • Transient thermal analysis for rapid thermal processing of GaAs
  • F.K. Yang, S.J. Pien, & R. Kwor
  • Arsine ambient rapid thermal annealing
  • T.N. Jackson, J.F. Degelormo, & G. Pepper
  • Thermal annealing effects in the strained (Ga, In)As layer
  • Depth oscillations of planar channeling yields in InP and GaP for lattice location applications
  • M.L. Swanson [and others]
  • Achievement of high-quality GaAs N-type ion implanted layer
  • l. Jinsheng & C. Tangsheng
  • Some applications of ion beams in III-V compound semiconductor device fabrication
  • J.P. Donnelly [and others]
  • Implant isolation mechanisms in GaAs, AlGaAs, InP and InGaAs
  • S.J. Pearton [and others]
  • Channeling of shallow Si implant into GaAs as a function of tilt and rotation angles
  • H.J. Hovel [and others]
  • Y-W. Choi [and others]
  • GaAs/AlGaAs quantum well mixing using low energy ion implantation and rapid thermal annealing
  • B. Elman [and others]
  • Outdiffusion of magnesium from Mg+ implanted GaAs
  • H. Baratte [and others]
  • Behaviour of implanted hydrogen in gallium phosphide single crystals
  • J.M. Zavada [and others]
  • Study of layer disordering in MeV Si implanted GaAs/AlGaAs superlattices
  • S. Chen [and others]
  • Effects of rapid thermal anneals on boron implanted GaAs
  • R.C. Bowman, Jr. [and others]
  • New Growth chemistries and techniques in metal-organic vapor phase epitaxy
  • Mechanisms for ion and Te-induced intermixing of GaAs-AlGaAs interfaces
  • K.B. Kahen & G. Rajeswaran
  • Mg+ ion implantation into GaAs : annealing and photoluminescence properties
  • Y. Takeuchi [and others]
  • Disordering of Si-implanted GaAs-AlGaAs superlattices by rapid thermal annealing
  • S.T. Lee [and others]
  • Electrical activation behavior of ion implanted silicon in gallium arsenide during rapid thermal annealing
  • J.P. de Souza, D.K. Sadana, & H.J. Hovel
  • Reactive ion etching of indium-based III-V materials using CH4-H2-Ar mixtures
  • A. Fathimulla, T. Loughran, & J. Bates
  • T.F. Kuech
  • Electrical damage introduced in GaAs by reactive ion etching using CH4/H2 mixture
  • P. Collot, C. Gaonach, & N. Proust
  • Evolution of the GaAs(001) surface physico-chemical characteristics and electrical p roperties of the Si3N4/GaAs interface with the NH3 photolysis treatment of the GaAs surface
  • J.L. Guizot [and others]
  • Downstream plasma activated etching of III-V compound semiconductors
  • R. Iyer & D.L. Lile
  • Thin-film encapsulants for thermal processing of GaAs
  • J.M. Molarius [and others]
  • The effect of Ar sputtering on the disordering of AlGaAs/GaAs multiple quantum wells
  • C. Shieh [and others]
  • Comparison of low vapor pressure organoarsenic compounds for MOVPE growth of GaAs
  • Gallium arsenide surface inversion using a novel silicon-silicon dioxide insulator structure
  • G.G. Fountain [and others]
  • A comparative study of Te- and Ge-based ohmic contacts on GaAs
  • K. Wuyts [and others]
  • Rapid thermal techniques for zinc diffusion and metal/gallium arsenide alloying to produce low resistance ohmic contacts
  • G. Rajeswaran [and others]
  • A comparative study of thin-film and bulk reaction kinetics and diffusion path : the Ir/GaAs system
  • K.J. Schulz & Y.A. Chang
  • Ion damage studies in GaAs-AlGaAs ultra-narrow wires
  • T.L. Cheeks [and others]
  • R.M. Lum & J.K. Klingert
  • Organometallic vapor phase epitaxial growth of ZnGeAs2 and (ZnGeAs2)[subscript x]Ge1+[subscript x] on GaAs
  • G.S. Solomon, J.B. Posthill, & M.L. Timmons
  • Thermal stability of EL2 in GaAs
  • Heavily-doped n(-GaAs with low compensation grown by atmospheric OMVPE
  • R. Venkatasubramanian & S.K. Ghandhi
  • Metal-organic chemical vapor deposition of InSb on GaAs and InSb in an inverted stagnation point flow geometry
  • G.A. Hebner, R.M. Biefeld, & K.P. Killeen
  • Redistribution effects for OMVPE InP/GaAs
  • T-I. Oh & W.B. Leigh
  • The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)
  • A. Bensaoula [and others]
  • Incorporation and diffusion of P-type dopants for metal organic vapor phase epitaxy
  • M.A. Tischler & T.F. Kuech
  • X. Boddaert [and others]
  • Electron irradiation doping with carbon in chemical beam epitaxy
  • Y. Iimura [and others]
  • Reflectance-difference spectroscopy : a new real-time, in-situ analysis of MBE and OMCVD growth surfaces
  • E. Colas [and others]
  • Convection effects in epitaxial reactors : an experimental and theoretical study
  • P.B. Chinoy, P.D. Agnello, & S.K. Ghandhi
  • Growth of CdTe thin films on polar and nonpolar semiconductor substrates by metalorganic chemical vapor deposition
  • P. Grodzinski [and others]
  • X-ray diffraction analysis of heteroepitaxial Cd1+[subscript y]Zn[subscript y]Te on GaAs
  • S.M. Johnson [and others]
  • X-ray, photoluminescence and etching studies of indium-doped LPE GaAs layers
  • Atomic abruptness and smoothness at heterointerfaces : fact or fiction?
  • A. Oourmazd & Y. Kim
  • Defects related to mixing behavior of highly silicon-doped GaAs/AlAs superlattices
  • N.D. Theodore [and others]
  • Photoluminescence measurement of sidewall damage in etched InGaAsP/InP and GaAs/AlGaAs microstructures
  • P. Grabbe [and others]
  • Comprehensive investigation of traps in GaAs/AlGaAs heterostructures and superlattices in DLTS
  • G. Papaioannou [and others]
  • Rapid thermal annealing of GaAs/AlGaAs coupled double quantum wells
  • E.S. Koteles [and others]
  • J.F. Chen, C.R. Wie, & F.A. Junga
  • Local atomic interdiffusion in CdTe/HgCdTe multilayered structures
  • Y. Kim [and others]
  • Phase separation and atomic ordering in epitaxial layers of III-V compound semiconductors
  • S. Mahajan & M.A. Shahid
  • The heteronucleation of and defect generation in MBE-grown InAs layers
  • M.M. Al-Jassim [and others]
  • Inversion domain boundary dislocations in heteroepitaxial films
  • T.T. Cheng, P. Pirouz, & F. Ernst
  • Molecular beam epitaxial growth and characterization of GaAs on sapphire and silicon-on-sapphire substrates
  • T.P. Humphreys [and others]
  • Vertical Bridgman growth of GaAs
  • AES and EELFS studies of initial stages of growth of GaAs/InAs/GaAs heterostructures
  • F.D. Schowengerdt, F.J. Grunthaner, & J.K. Liu
  • I-V, C-V, and Hall effect studies of indium-doped LPE GaAs
  • J.F. Chen, K. Xie, & C.R. Wie
  • The effect of substrate orientation on the properties of (Ga, Al)As grown by gas source molecular beam epitaxy
  • A. Sandhu [and others]
  • Mechanisms of self-diffusion and of doping-enhancement of superlattice disordering in GaAs and AlAs compounds
  • T.Y. Tan & U. Gösele
  • Studies of In[subscript 0.53]Ga[subscript 0.47]As/InP superlattice mixing and conversion
  • S.A. Schwarz [and others]
  • R.E. Kremer [and others]
  • Doping study of Se into AlGaAs layers grown by MBE, and their application to HEMT structures
  • T. Maeda, T. Ishikawa, & K. Kondo
  • Strain-induced lateral confinement of carriers in semiconductor quantum wells
  • K. Kash [and others]
  • GaAs on Si grown by MBE : progress and applications for selectivity doped heterojunction transistors (SDHTs)
  • N. Chand [and others]
  • Photoluminescence of InP/GaAs/Si heterostructures
  • V.P. Mazzi [and others]
  • Formation of high quality GaAs/Si hetero-structure by solid phase epitaxy
  • M. Miyao [and others]
  • Characterization of III-V semiconductor structures using electron beam electroreflectance (EBER) spectroscopy
  • Migration-enhanced molecular beam epitaxial growth and characterization of GaAs on Si substrates
  • J.H. Kim [and others]
  • Dislocations in GaAs/Si interfaces
  • J.G. Zhu [and others]
  • Heteroepitaxial growth of high quality GaAs films on rapid-thermal-annealing processes CaF2/Si(511) structures
  • T. Asano [and others]
  • High wualaity GaAs on Si and its application to a solar cell
  • Y. Ohmachi [and others]
  • Plasma-assisted epitaxial growth of GaAs on Si
  • Q.Z. Gao, T. Hariu, & S. Ono
  • M.H. Herman [and others]
  • Heteroepitaxy of GaAs on Si and Ge by low-energy ion beam deposition using alternating beams
  • T.E. Haynes, R.A. Zuhr, & S.J. Pennycook
  • Material and device properties of 3" diameter GaAs-on-Si with buried P-type layers
  • S.J. Pearton [and others]
  • X-ray studies of GaAs/Si and ZnS/Si
  • H.M. Kim [and others]
  • Low temperature GaAs growth on GaAs and Si with metal-organic molecular beam epitaxy assisted by hydrogen plasma
  • I. Suemune [and others]
  • The influence of the arsine source on the purity of InGaAs grown by hydride VPE
  • D.N. Buckley & M.M. Matthiesen
Control code
ocm20265163
Dimensions
24 cm.
Extent
xvii, 714 pages
Isbn
9781558990173
Lccn
89013067
Media category
unmediated
Media MARC source
rdamedia
Media type code
n
Other physical details
illustrations
System control number
(OCoLC)20265163
Label
Advances in materials, processing, and devices in III-V compound semiconductors : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A., editors, Devendra K. Sadana, Lester E. Eastman, Russell Dupuis
Publication
Bibliography note
Includes bibliographical references
Carrier category
volume
Carrier category code
nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
  • On the origin of the new electron traps induced by rapid thermal annealing in GaAs using capping proximity technique
  • Ion implantation and characterization of III-V materials
  • R.G. Wilson & D.B. Rensch
  • Ion beam processing of GaAs at elevated temperatures
  • J.S. Williams [and others]
  • Ion implantation damage and its annealing characteristics in an AlAs/GaAs layer structure
  • A.G. Cullis [and others]
  • Fabrication of GaAs/AlGaAs quantum well lasers with MeV oxygen ion implantation
  • F. Xiong [and others]
  • Activation uniformity dependence of undoped semi-insulating GaAs on post-implant annealing conditions
  • C. Lanzieri, R. Graffitti, & A. Cetronio
  • G. Marrakshi [and others]
  • Relationship between electrical activation and residual defects in MeV Si implanted GaAs
  • G. Braunstein [and others] --
  • The effects of capless face-to-face annealing temperature and time on the properties of silicon implanted gallium arsenide
  • O. Paz
  • Rapid thermal annealing and ion implantation of heteroepitaxial ZnSe/GaAs
  • B.J. Skromme [and others]
  • Transient thermal analysis for rapid thermal processing of GaAs
  • F.K. Yang, S.J. Pien, & R. Kwor
  • Arsine ambient rapid thermal annealing
  • T.N. Jackson, J.F. Degelormo, & G. Pepper
  • Thermal annealing effects in the strained (Ga, In)As layer
  • Depth oscillations of planar channeling yields in InP and GaP for lattice location applications
  • M.L. Swanson [and others]
  • Achievement of high-quality GaAs N-type ion implanted layer
  • l. Jinsheng & C. Tangsheng
  • Some applications of ion beams in III-V compound semiconductor device fabrication
  • J.P. Donnelly [and others]
  • Implant isolation mechanisms in GaAs, AlGaAs, InP and InGaAs
  • S.J. Pearton [and others]
  • Channeling of shallow Si implant into GaAs as a function of tilt and rotation angles
  • H.J. Hovel [and others]
  • Y-W. Choi [and others]
  • GaAs/AlGaAs quantum well mixing using low energy ion implantation and rapid thermal annealing
  • B. Elman [and others]
  • Outdiffusion of magnesium from Mg+ implanted GaAs
  • H. Baratte [and others]
  • Behaviour of implanted hydrogen in gallium phosphide single crystals
  • J.M. Zavada [and others]
  • Study of layer disordering in MeV Si implanted GaAs/AlGaAs superlattices
  • S. Chen [and others]
  • Effects of rapid thermal anneals on boron implanted GaAs
  • R.C. Bowman, Jr. [and others]
  • New Growth chemistries and techniques in metal-organic vapor phase epitaxy
  • Mechanisms for ion and Te-induced intermixing of GaAs-AlGaAs interfaces
  • K.B. Kahen & G. Rajeswaran
  • Mg+ ion implantation into GaAs : annealing and photoluminescence properties
  • Y. Takeuchi [and others]
  • Disordering of Si-implanted GaAs-AlGaAs superlattices by rapid thermal annealing
  • S.T. Lee [and others]
  • Electrical activation behavior of ion implanted silicon in gallium arsenide during rapid thermal annealing
  • J.P. de Souza, D.K. Sadana, & H.J. Hovel
  • Reactive ion etching of indium-based III-V materials using CH4-H2-Ar mixtures
  • A. Fathimulla, T. Loughran, & J. Bates
  • T.F. Kuech
  • Electrical damage introduced in GaAs by reactive ion etching using CH4/H2 mixture
  • P. Collot, C. Gaonach, & N. Proust
  • Evolution of the GaAs(001) surface physico-chemical characteristics and electrical p roperties of the Si3N4/GaAs interface with the NH3 photolysis treatment of the GaAs surface
  • J.L. Guizot [and others]
  • Downstream plasma activated etching of III-V compound semiconductors
  • R. Iyer & D.L. Lile
  • Thin-film encapsulants for thermal processing of GaAs
  • J.M. Molarius [and others]
  • The effect of Ar sputtering on the disordering of AlGaAs/GaAs multiple quantum wells
  • C. Shieh [and others]
  • Comparison of low vapor pressure organoarsenic compounds for MOVPE growth of GaAs
  • Gallium arsenide surface inversion using a novel silicon-silicon dioxide insulator structure
  • G.G. Fountain [and others]
  • A comparative study of Te- and Ge-based ohmic contacts on GaAs
  • K. Wuyts [and others]
  • Rapid thermal techniques for zinc diffusion and metal/gallium arsenide alloying to produce low resistance ohmic contacts
  • G. Rajeswaran [and others]
  • A comparative study of thin-film and bulk reaction kinetics and diffusion path : the Ir/GaAs system
  • K.J. Schulz & Y.A. Chang
  • Ion damage studies in GaAs-AlGaAs ultra-narrow wires
  • T.L. Cheeks [and others]
  • R.M. Lum & J.K. Klingert
  • Organometallic vapor phase epitaxial growth of ZnGeAs2 and (ZnGeAs2)[subscript x]Ge1+[subscript x] on GaAs
  • G.S. Solomon, J.B. Posthill, & M.L. Timmons
  • Thermal stability of EL2 in GaAs
  • Heavily-doped n(-GaAs with low compensation grown by atmospheric OMVPE
  • R. Venkatasubramanian & S.K. Ghandhi
  • Metal-organic chemical vapor deposition of InSb on GaAs and InSb in an inverted stagnation point flow geometry
  • G.A. Hebner, R.M. Biefeld, & K.P. Killeen
  • Redistribution effects for OMVPE InP/GaAs
  • T-I. Oh & W.B. Leigh
  • The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)
  • A. Bensaoula [and others]
  • Incorporation and diffusion of P-type dopants for metal organic vapor phase epitaxy
  • M.A. Tischler & T.F. Kuech
  • X. Boddaert [and others]
  • Electron irradiation doping with carbon in chemical beam epitaxy
  • Y. Iimura [and others]
  • Reflectance-difference spectroscopy : a new real-time, in-situ analysis of MBE and OMCVD growth surfaces
  • E. Colas [and others]
  • Convection effects in epitaxial reactors : an experimental and theoretical study
  • P.B. Chinoy, P.D. Agnello, & S.K. Ghandhi
  • Growth of CdTe thin films on polar and nonpolar semiconductor substrates by metalorganic chemical vapor deposition
  • P. Grodzinski [and others]
  • X-ray diffraction analysis of heteroepitaxial Cd1+[subscript y]Zn[subscript y]Te on GaAs
  • S.M. Johnson [and others]
  • X-ray, photoluminescence and etching studies of indium-doped LPE GaAs layers
  • Atomic abruptness and smoothness at heterointerfaces : fact or fiction?
  • A. Oourmazd & Y. Kim
  • Defects related to mixing behavior of highly silicon-doped GaAs/AlAs superlattices
  • N.D. Theodore [and others]
  • Photoluminescence measurement of sidewall damage in etched InGaAsP/InP and GaAs/AlGaAs microstructures
  • P. Grabbe [and others]
  • Comprehensive investigation of traps in GaAs/AlGaAs heterostructures and superlattices in DLTS
  • G. Papaioannou [and others]
  • Rapid thermal annealing of GaAs/AlGaAs coupled double quantum wells
  • E.S. Koteles [and others]
  • J.F. Chen, C.R. Wie, & F.A. Junga
  • Local atomic interdiffusion in CdTe/HgCdTe multilayered structures
  • Y. Kim [and others]
  • Phase separation and atomic ordering in epitaxial layers of III-V compound semiconductors
  • S. Mahajan & M.A. Shahid
  • The heteronucleation of and defect generation in MBE-grown InAs layers
  • M.M. Al-Jassim [and others]
  • Inversion domain boundary dislocations in heteroepitaxial films
  • T.T. Cheng, P. Pirouz, & F. Ernst
  • Molecular beam epitaxial growth and characterization of GaAs on sapphire and silicon-on-sapphire substrates
  • T.P. Humphreys [and others]
  • Vertical Bridgman growth of GaAs
  • AES and EELFS studies of initial stages of growth of GaAs/InAs/GaAs heterostructures
  • F.D. Schowengerdt, F.J. Grunthaner, & J.K. Liu
  • I-V, C-V, and Hall effect studies of indium-doped LPE GaAs
  • J.F. Chen, K. Xie, & C.R. Wie
  • The effect of substrate orientation on the properties of (Ga, Al)As grown by gas source molecular beam epitaxy
  • A. Sandhu [and others]
  • Mechanisms of self-diffusion and of doping-enhancement of superlattice disordering in GaAs and AlAs compounds
  • T.Y. Tan & U. Gösele
  • Studies of In[subscript 0.53]Ga[subscript 0.47]As/InP superlattice mixing and conversion
  • S.A. Schwarz [and others]
  • R.E. Kremer [and others]
  • Doping study of Se into AlGaAs layers grown by MBE, and their application to HEMT structures
  • T. Maeda, T. Ishikawa, & K. Kondo
  • Strain-induced lateral confinement of carriers in semiconductor quantum wells
  • K. Kash [and others]
  • GaAs on Si grown by MBE : progress and applications for selectivity doped heterojunction transistors (SDHTs)
  • N. Chand [and others]
  • Photoluminescence of InP/GaAs/Si heterostructures
  • V.P. Mazzi [and others]
  • Formation of high quality GaAs/Si hetero-structure by solid phase epitaxy
  • M. Miyao [and others]
  • Characterization of III-V semiconductor structures using electron beam electroreflectance (EBER) spectroscopy
  • Migration-enhanced molecular beam epitaxial growth and characterization of GaAs on Si substrates
  • J.H. Kim [and others]
  • Dislocations in GaAs/Si interfaces
  • J.G. Zhu [and others]
  • Heteroepitaxial growth of high quality GaAs films on rapid-thermal-annealing processes CaF2/Si(511) structures
  • T. Asano [and others]
  • High wualaity GaAs on Si and its application to a solar cell
  • Y. Ohmachi [and others]
  • Plasma-assisted epitaxial growth of GaAs on Si
  • Q.Z. Gao, T. Hariu, & S. Ono
  • M.H. Herman [and others]
  • Heteroepitaxy of GaAs on Si and Ge by low-energy ion beam deposition using alternating beams
  • T.E. Haynes, R.A. Zuhr, & S.J. Pennycook
  • Material and device properties of 3" diameter GaAs-on-Si with buried P-type layers
  • S.J. Pearton [and others]
  • X-ray studies of GaAs/Si and ZnS/Si
  • H.M. Kim [and others]
  • Low temperature GaAs growth on GaAs and Si with metal-organic molecular beam epitaxy assisted by hydrogen plasma
  • I. Suemune [and others]
  • The influence of the arsine source on the purity of InGaAs grown by hydride VPE
  • D.N. Buckley & M.M. Matthiesen
Control code
ocm20265163
Dimensions
24 cm.
Extent
xvii, 714 pages
Isbn
9781558990173
Lccn
89013067
Media category
unmediated
Media MARC source
rdamedia
Media type code
n
Other physical details
illustrations
System control number
(OCoLC)20265163

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